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* Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc * Low Leakage Current -- ICEX = 0.5 mAdc (Max) @ Rated Voltage * Excellent DC Current Gain -- hFE = 20 (Min) @ IC = 4.0 Adc * High Current Gain -- Bandwidth Product -- fT = 4.0 MHz (Min) @ IC = 0.5 A
(1) Indicates JEDEC Registered Data.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data . . . designed for general-purpose power amplifier and switching applications.
Complementary Silicon High-Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS (1)
REV 7 PD, POWER DISSIPATION (WATTS) Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Device Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating 100 120 140 160 20 40 60 80 0 0 Symbol TJ, Tstg VCEO 25 VCB VEB PD IC IB Symbol JC 50 75 100 125 150 TC, CASE TEMPERATURE (C)
Figure 1. Power Derating
2N5877
60
60
- 65 to + 200
150 0.857
4.0
5.0
10 20
1.17
Max
2N5878
80
80
Watts W/_C
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
175
200
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 VOLTS 150 WATTS
2N5877 2N5878
Order this document by 2N5877/D
CASE 1-07 TO-204AA (TO-3)
NPN
1
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2N5877 2N5878
* Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle (2) fT = |hfe| * ftest. Small-Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) SWITCHING CHARACTERISTICS
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
OFF CHARACTERISTICS
For PNP test circuit, reverse all polarities.
Fall Time
Storage Time
Rise Time
Current-Gain -- Bandwidth Product (2) (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2N5877, 2N5878
Base-Emitter Saturation Voltage (1) (IC = 10 Adc, IB = 2.5 Adc) Base-Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage (1) (IC = 5.0 Adc, IB = 0.5 Adc) (IC = 10 Adc, IB = 2.5 Adc)
DC Current Gain (1) (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc)
Emitter Cutoff Current (VEB = 5.0 Vdc, IE = 0)
Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0)
Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0)
0
t, TIME ( s)
-11 V
2
tr, tf 10 ns DUTY CYCLE = 1.0% + 9.0 V 25 s
Figure 2. Switching Time Test Circuit
FOR CURVES OF FIGURES 3 and 6, RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
v
D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA
51
25
RB
(VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 Adc, See Figure 2)
Characteristic
+ 7.0 V
D1
7.5
v 2.0%.
VCC - 30 V
RC
SCOPE
0.01 0.1
0.1 0.07 0.05
0.02
0.03
0.2
1.0 0.7 0.5
0.3
2N5877 2N5878
2N5877 2N5878
2N5877 2N5878
2N5877 2N5878 2N5877 2N5878
Motorola Bipolar Power Transistor Device Data
0.2 VCEO(sus) 2N5877, 2N5878 (NPN) 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) VCE(sat) VBE(sat) VBE(on) Symbol ICBO ICEO IEBO ICEX fT Cob hFE hfe tr ts tf td @ VBE(off) = 5.0 V Min 4.0 35 20 4.0 20 60 80 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- tr VCC = 30 V IC/IB = 10 TJ = 25C Max -- 100 -- 300 0.8 1.0 0.7 1.5 2.5 1.0 3.0 1.0 0.5 0.5 0.5 0.5 5.0 5.0 1.0 1.0 -- -- -- -- mAdc mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc pF s s s -- --
Figure 3. Turn-On Time
2N5877 2N5878
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 SINGLE PULSE 0.05 0.02 0.01 D = 0.5 0.2 P(pk) JC(t) = r(t) JC JC = 1.17C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0 t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
20 IC, COLLECTOR CURRENT (AMPERES) 1.0 ms 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 5.0 TJ = 200C dc 5.0 ms SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 2N5875, 2N5877 2N5876, 2N5878 7.0 70 20 10 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 0.5 ms 0.1 ms
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Figure 5. Active-Region Safe Operating Area
10 7.0 5.0 3.0 t, TIME ( s) 2.0 ts 1.0 0.7 0.5 0.3 0.2 2N5877, 2N5878 (NPN) 0.1 0.1 0.2 tf
700 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C TJ = 25C 500 C, CAPACITANCE (pF)
300 200
Cib
Cob 100 2N5877, 2N5878 (NPN)
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPERES)
10
70 0.5
1.0
2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
30
50
Figure 6. Turn-Off Time
Figure 7. Capacitance
Motorola Bipolar Power Transistor Device Data
3
2N5877 2N5878
PACKAGE DIMENSIONS
A N C -T- E D U V
2 2 PL SEATING PLANE
K
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE Z
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4
Motorola Bipolar Power Transistor Device Data
*2N5877/D*
2N5877/D

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